FDD8778
Manufacturer:
On Semiconductor
Mfr.Part #:
FDD8778
Datasheet:
Description:
MOSFETs TO-252AA SMD/SMT N-Channel number of channels:1 39 W 25 V Continuous Drain Current (ID):35 A 18 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 25 V |
| Length | 6.73 mm |
| Width | 6.22 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 14 MΩ |
| Height | 2.39 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.2604 g |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 35 A |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 39 W |
| Power Dissipation | 39 W |
| Threshold Voltage | 1.5 V |
| Number of Channels | 1 |
| Input capacitance | 845 pF |
| Continuous Drain Current (ID) | 35 A |
| Rds On Max | 14 mΩ |
| Drain to Source Voltage (Vdss) | 25 V |
| Turn-On Delay Time | 6 ns |
| Turn-Off Delay Time | 43 ns |
| Element Configuration | Single |
| Rise Time | 22 ns |
| Gate Charge | 18 nC |
| Drain to Source Resistance | 11.6 mΩ |
| Max Junction Temperature (Tj) | 175 °C |
| Nominal Vgs | 1.5 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 25 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 1.2 V |
| FET Type(Transistor Polarity) | N-Channel |
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